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ORTE Photonics Co., Ltd.,

Company Address: No. 5 Jixiang 1st Road, Conghua District, Guangzhou City, Guangdong Province, China

URL：http://www.orte-photonics.com
TEL: 86-20-61798333
FAX: 86-20-61798332
MAIL: info@orte-photonics.com

Hotline:

Ms. Liu：+86-158 1713 1815（Wechat same number）

E-mail: Allien@orte-photonics.com
Mr. Chen：+86-135 7030 9005（Wechat same number）

E-mail: Chenshunji@orte-photonics.com
Mr. Zou：+86-139 2618 9869（Wechat same number）

E-mail: Charles.zou@orte-photonics.com

2.5G 1310nm/1550nm FP-LD TO-CAN

Key Low Temperature Glass Welding Process Fully imported automatic production line The typical value of the leak rate is above 5.0×10-9 Pa·m3/s Economical high-quality devices to meet your different needs Monthly production of 600,000 active devices to meet your multi-model, high-volume short-term delivery requirements

Key words:

2.5G 1310nm/1550nm FP-LD TO-CAN

Category:

Product Categories

TO can

Application Field

Optical Network Transmission

Product accessories:

Product consultation

Related Products

Product Description

Description
ORTE1311-4-1-C/ORTE1551-4-1-C is an uncooled
FP coaxial laser with a transmission rate of 2.5G and a central wavelength of 1310nm/1550nm. It integrates a high-speed FP-LD chip and a monitor photodiode Packaged in a small profile cermet body.
It is designed for SFP transceivers and other types of high-speed optical modules, as well as communication and data applications, including SONET/SDH,
Fiber Channel and Gigabit Ethernet. "

Features	Applications
Low threshold current" "FP-LD chip with MQW structure without cooler. 1.5 (mm) small bulb cap for TO56 coaxial package. Data transmission speed up to 2.5Gbps. Good high temperature characteristics"	"SONET/SDH OC-3/STM-1 OC-12/STM-4 OC48/STM-16 Gigabit Ethernet" passive optical network electronic signal communication data communication" mobile communication network optical transceiver

Absolute Maximum Ratings
Parameter	Conditions	Ratings	unit
Reverse Voltage(Laser Diode)		2	V
Reverse Voltage(Photo Diode)		20	V
Forward Current(Laser Diode)		150	mA
Forward Current (Photo Diode)		2	mA
Operating TemperatureOperating Temperature		-20-85	℃
Storage Temperature storage temperature		-40-95	℃

Electrical/opticalcharacteristics(T=25℃)electrical/optical characteristics(temperature is 25℃)
Parameter parameter	Test conditionsTest environment	Minimum value	TypTypical value	Max maximum value	Unit unit
Threshold Current threshold current	CW		10	14.5	mA
Threshold Current threshold current	CW 85°C				mA
Slope Efficiency Slope efficiency	CW,Ith+20mA	0.45			mW/mA
Slope Efficiency Slope efficiency	CW,Ith+20mA,85℃				mW/mA
Output PowerOutput power	CW, Ith +20mA	9			mW
Output PowerOutput power	CW,Ith+20mA,85℃				mW
Operating VoltageOperating Voltage	CW,Ith+20mA		1.18	1.5	V
Peak Wavelength	CW, Ith+ 20mA				nm
Spectral Width spectral width	CW, Ith +20mA			2	nm
Temperature Coefficient of Peak Wavelength	CW, -20 to 85°C		0.09		nm/°C
Monitor Photocurrent	CW,Ith+20mA	0.1		1.0	mA
Rise and Fal time rise and fall time	Ib=Ith, 20-80%		100	200	ps
Relative Intensity Noise relative intensity noise	CW,Ith+20mA		-140		dB/Hz
Beam Farfield (Vertical) beam divergence angle (vertical)	CW,Ith+20mA		twenty three		Deg.
Beam Farfield (Horizontal) beam divergence angle (horizontal)	CW.Ith+20mA		18		Deg.
Series Resistance series resistance	Cw, Ith +20mA			12	Q
Dark Current (PhotoDiode) dark current (photodiode)	Vkp=5V			100	n
Capacitance (Photo Diode) capacitance (photodiode)	Vep=5V,f=1MHz		10	20	pF
Focal Length		6.1	6.3	6.5	mm