ORTE Photonics Co., Ltd., Recruitment |

Language

中文版

English

Product Center

ORTE Photonics Co., Ltd.,

Company Address: No. 5 Jixiang 1st Road, Conghua District, Guangzhou City, Guangdong Province, China

URL：http://www.orte-photonics.com
TEL: 86-20-61798333
FAX: 86-20-61798332
MAIL: info@orte-photonics.com

Hotline:

Ms. Liu：+86-158 1713 1815（Wechat same number）

E-mail: Allien@orte-photonics.com
Mr. Chen：+86-135 7030 9005（Wechat same number）

E-mail: Chenshunji@orte-photonics.com
Mr. Zou：+86-139 2618 9869（Wechat same number）

E-mail: Charles.zou@orte-photonics.com

2.5G 1310nm/1550nm DFB-LD TO-CAN

Key Low Temperature Glass Welding Process Fully imported automatic production line The typical value of the leak rate is above 5.0×10-9 Pa·m3/s Economical high-quality devices to meet your different needs Monthly production of 600,000 active devices to meet your multi-model, high-volume short-term delivery requirements

Key words:

2.5G 1310nm/1550nm DFB-LD TO-CAN

Category:

Product Categories

TO can

Application Field

Optical Network Transmission

Product accessories:

Product consultation

Related Products

Product Description

Description
ORTE1312-1-1-A is a DFB coaxial
laser integrates a high-speed DFB-LD chip and a monitoring photodiode into a small-sized cermet tube In vivo encapsulation. It is designed
for SFP transceivers and other types of high-speed optical modules, as well as communications and data applications, including SONET/SDH, Fiber Channel and
Gigabit Ethernet. "

Features	Applications
Low threshold current" 1310nm typical emission wavelength " DFB-LD chip with MQW structure without cooler Use TO56 coaxial package with 2.0 (mm) large bulb cap Data transmission speed up to 2.5Gbps Good high temperature characteristics"	"SONET/SDH OC-3/STM-1 OC-12/STM-4 OC48/STM-16 Gigabit Ethernet" passive optical network electronic signal communication data communication" mobile communication network optical transceiver

Absolute Maximum Ratings
Parameter	Conditions	Ratings	unit
Reverse Volume(Laser Diode )		2	V
Reverse voltage(Fhoto Diode)		20	V
Forward Curent(Laser Diode)		150	mA
Forwand Curent (Photo Dlode)		2	ma
Operating Temperature		20-65	℃
Slorage Temperaure		-40-95	℃

Electrical/opticalcharacteristics(T=25℃)
Parameter	Test conditions	Min	type	Max	unit
Threshold Current	CW		6	12	mA
Threshold Current	CW 85°C			35	mA
Slope Efficiency	CW,Ith+20mA	0.4	0.45		mW/mA
Slope Efficiency	CW,Ith+20mA,85℃	0.23	0.27		mW/mA
Output Power	CW,Ith+20mA	8	9		mW
Output Power	CW,Ith+20mA,85℃	4.6	5.4		mW
Operating Voltage	CW,Ith+20mA		1.18	1.5	V
Peak Wavelength	CW,Ith+20mA				nm
Spectral Width	CW,Ith+20mA			1	nm
Temperature Coefficient of Peak Wavelength	CW, -20 to 85°C		0.09		nm/°C
Side-Mode Suppression Ratio	CW,Ith+20mA	35	40		dB
Rise and Fall time	Ib=Ith, 20-80%		100	200	ps
Relative Intensity Noise	CW,Ith+20mA		-140		dB/Hz
Beam Farfield (Vertical)	CW,Ith+20mA		30		Deg.
Beam Farfield (Horizontal)	CW,Ith+20mA		25		Deg.
Monitor Output Current	CW, Ith +20mA	100		1000	μA
Dark Current(PhotoDiode)	Vwp=5V			100	n
Capacitance(Photo Diode)	Vxp=5V,f=1MHz		10	20	pF
Focal Length		6.2	6.5	6.8	mm